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| APM9932CK Dual Enhancement Mode MOSFET (N-and P-Channel) Features * N-Channel 20V/9A, RDS(ON) =12m(typ.) @ VGS = 4.5V RDS(ON) =18m(typ.) @ VGS = 2.5V Pin Description D D D D * S1 G1 S2 G2 P-Channel -20V/-6A, RDS(ON) =30m(typ.) @ VGS =-4.5V RDS(ON) =50m(typ.) @ VGS =-2.5V Top View of SOP - 8 (8) D1 (7) D1 (6) D2 (5) D2 * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) S2 (3) N-P Channel MOSFET Ordering and Marking Information A PM 9932C Lead F ree C ode H andling C ode T em p. R ange P ackage C ode P ackage C ode K : S O P -8 O perating Junction T em p. R ange C : -55 to 150C H andling C ode T U : T ube T R : T ape & R eel Lead F ree C ode L : Lead F ree D evice B lank : O riginal D evice X X X X X - D ate C ode A PM 9932C K : A PM 9932C XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1 www.anpec.com.tw APM9932CK Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 (TA = 25C unless otherwise noted) N Channel 20 16 9 30 9 30 1.5 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W P Channel -20 12 -6 -20 -1.2 V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation A C Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Condition APM9932CK Min. Typ. Max. Unit Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=16V, VGS=0V VDS=-16V, VGS=0V VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=16V, VDS=0V VGS=12V, VDS=0V VGS=4.5V, IDS=9A RDS(ON) a N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 1 -1 0.55 -0.45 0.7 -0.6 1.5 -1 100 100 12 30 18 50 0.75 -0.8 18 45 27 65 1.3 -1.3 V A V nA Drain-Source On-State Resistance VGS=-4.5V, IDS=-6A VGS=2.5V, IDS=6A VGS=-2.5V, IDS=-4A ISD=1.5A, VGS=0V ISD=-1.2A, VGS=0V m VSD a Diode Forward Voltage V Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 2 www.anpec.com.tw APM9932CK Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25C unless otherwise noted) Test Condition APM9932CK Min. Typ. Max. Unit Dynamic Characteristics Ciss Input Capacitance N-Channel VGS=0V, VDS=20V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-20V, Frequency=1.0MHz N-Channel VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 P-Channel VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6 b N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1205 1210 310 310 210 205 8 7 10 9 29 27 7 6 15 13 17 16 43 42 11 9 ns pF Coss Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Crss td(ON) Tr td(OFF) Tf Gate Charge Characteristics Qg Qgs Qgd Total Gate Charge N-Channel VDS=10V, VGS=4.5V, IDS=6A P-Channel VDS=-10V, VGS=-4.5V, IDS=-5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 17 5 5.2 2.8 3.6 22 25 nC Gate-Source Charge Gate-Drain Charge Notes: a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 3 www.anpec.com.tw APM9932CK Typical Characteristics N-Channel Power Dissipation 2.5 10 Drain Current 2.0 8 1.5 ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 Ptot - Power (W) 6 1.0 4 0.5 2 0.0 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance on )L im Duty = 0.5 0.2 it ID - Drain Current (A) Rd s( 10 1ms 10ms 0.1 0.1 0.05 0.02 0.01 1 100ms 1s 0.01 0.1 DC Single Pulse Mounted on 1in pad o RJA : 62.5 C/W 2 TA=25 C 0.01 0.01 0.1 O 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 4 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Output Characteristics 20 VGS= 3, 4, 5, 6, 7, 8, 9, 10V 30 Drain-Source On Resistance 2.5V RDS(ON) - On - Resistance () 16 25 ID - Drain Current (A) 20 VGS=2.5V 12 15 VGS=4.5V 10 8 4 2V 5 0 0 2 4 6 8 10 0 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 20 1.6 Gate Threshold Voltage IDS=250 16 Normalized Threshold Voltage 4.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 12 8 Tj=125 C o o 4 Tj=-55 C Tj=25 C o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 5 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 4.5V 1.6 IDS = 9A 10 Tj=150 C o Source-Drain Diode Forward 20 Normalized On Resistance 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 12m 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 Tj=25 C 1 o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 2000 Frequency=1MHz 10 VDS=10 V ID = 6 A Gate Charge VGS - Gate - source Voltage (V) 20 1600 8 C - Capacitance (pF) Ciss 1200 6 800 4 400 Crss Coss 2 0 0 4 8 12 16 0 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 6 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) P-Channel Power Dissipation 2.5 8 Drain Current 2.0 1.5 -ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 6 Ptot - Power (W) 4 1.0 2 0.5 0.0 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 50 2 1 Thermal Transient Impedance it on )L 10 im Duty = 0.5 0.2 0.1 1ms -ID - Drain Current (A) Rd s( 10ms 0.1 0.05 0.02 0.01 1 100ms 1s 0.1 0.01 Single Pulse Mounted on 1in pad o RJA : 62.5 C/W 2 DC TA=25 C 0.01 0.01 0.1 O 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 7 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Output Characteristics 10 VGS= -2.5, -3, -4, -5, -6, -7, -8, -9, -10V 70 80 Drain-Source On Resistance RDS(ON) - On - Resistance () 8 -ID - Drain Current (A) 60 VGS= -2.5V 50 40 30 20 VGS= -4.5V 6 -2V 4 2 0 0 2 4 6 8 10 0 2 4 6 8 10 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 10 1.50 Gate Threshold Voltage IDS= -250 8 Normalized Threshold Voltage 3.0 1.25 -ID - Drain Current (A) 1.00 6 0.75 4 Tj=125 C o 0.50 2 Tj=25 C o Tj=-55 C o 0.25 0 0.0 0.5 1.0 1.5 2.0 2.5 0.00 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 8 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -6A Tj=150 C o Source-Drain Diode Forward 10 Normalized On Resistance -IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 30m 0 25 50 75 100 125 150 o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 2000 Frequency=1MHz 10 VDS= -10V ID= -5A 8 Gate Charge 1600 Ciss 1200 -VGS - Gate - source Voltage (V) 20 C - Capacitance (pF) 6 800 4 400 Crss 0 Coss 2 0 4 8 12 16 0 0 5 10 15 20 25 30 35 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 9 www.anpec.com.tw APM9932CK Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 10 www.anpec.com.tw APM9932CK Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3C/second max. 150C 200C 60-180 seconds 3C/second max 217C 60-150 seconds 245 +0/-5C 250 +0/-5C 10-30 seconds 20-40 seconds Average ramp-up rate 3C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100C - Temperature Mix (Tsmax) 150C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5C 240 +0/-5C Time within 5C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6C/second max. 6 minutes max. Time 25C to Peak Temperature Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 11 6C/second max. 8 minutes max. www.anpec.com.tw Note: All temperatures refer to topside of the package. Measured on the body surface. APM9932CK Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 3301 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2 0.2 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 SOP-8 F D D1 Po P1 Ao 5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 Ko t 2.1 0.1 0.30.013 (mm) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 12 www.anpec.com.tw APM9932CK Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 13 www.anpec.com.tw |
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